FQB4N80TM
Manufacturer:
On Semiconductor
Mfr.Part #:
FQB4N80TM
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT N-Channel number of channels:1 3.13 W 800 V Continuous Drain Current (ID):3.9 A 25 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 800 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 3.6 Ω |
| Height | 4.83 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 3.9 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 3.13 W |
| Power Dissipation | 3.13 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 880 pF |
| Continuous Drain Current (ID) | 3.9 A |
| Rds On Max | 3.6 Ω |
| Drain to Source Voltage (Vdss) | 800 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 35 ns |
| Element Configuration | Single |
| Fall Time | 35 ns |
| Rise Time | 45 ns |
| Gate Charge | 25 nC |
| Drain to Source Resistance | 3.6 Ω |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 3 V |
Stock: 488
Distributors
pcbx
pcbxUnit Price$1.65817
Ext.Price$1.65817
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.65817 | $1.65817 |
| 10 | $1.39119 | $13.91190 |
| 25 | $1.26754 | $31.68850 |
| 50 | $1.15488 | $57.74400 |
| 100 | $1.05223 | $105.22300 |
| 300 | $1.01288 | $303.86400 |
| 500 | $0.97501 | $487.50500 |